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NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor

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NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor

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Brand Name : onsemi

Model Number : NDT2955

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1 - 3 days

Packaging Details : standard

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Mounting Type : Surface Mount

Vgs (Max) : ±20V

Operating Temperature : -55°C ~ 150°C (TJ)

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NDT2955 MOSFET Power Electronics
Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
300mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
601 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA
General Description
This 60 V P−Channel MOSFET is produced using onsemi’s high voltage Trench process. It has been optimized for power management plications.
Features
• −2.5 A, −60 V
♦ RDS(ON) = 300 m @ VGS = −10 V
♦ RDS(ON) = 500 m @ VGS = −4.5 V
• High Density Cell Design for Extremely Low RDS(ON).
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• This is a Pb−Free Device
Applications
• DC/DC Converter
• Power Management

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How to buy >>>



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NDT2955 MOSFET Power Electronics Package TO-261-4 P-Channel Enhancement Mode Field Effect Transistor


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