Product Name: NTBGS004N10G MOSFET Power Electronics
Description:
The NTBGS004N10G is a high-speed power MOSFET designed for switching applications. It features a low on-resistance and low gate charge, allowing for improved efficiency and reliability. The device is housed in a PowerPAK SO-8 package for easy mounting and thermal management.
Parameters:
• Breakdown Voltage (Vds): 100V
• Gate-Source Voltage (Vgs): +/-20V
• On-Resistance (Rds): 0.0045Ω
• Drain-Source Voltage (Vds): 100V
• Gate-Drain Voltage (Vgd): +/-20V
• Drain Current (Id): 4A
• Maximum Power Dissipation (Pd): 28W
• Operating Temperature: -55°C to 150°C
• Package: PowerPAK SO-8 Package
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
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NTBGS004N10G MOSFET Power Electronic Component High-Performance And Reliable Images
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