MGSF1N02LT1G MOSFET Power Electronics
TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The MGSF1N02LT1G is a N-channel enhancement mode power MOSFET designed to withstand high energy pulse in the avalanche and commutation mode. This device is housed in a TO-236-3 package, offering a wide range of features including low on-resistance, low gate charge, fast switching speed, and improved thermal performance. It is composed of a monolithic double-diffused MOSFET with advanced MOSFET technology for excellent quality and reliability.
The MGSF1N02LT1G features a wide range of features to ensure reliable operation in various applications. It has a low on-resistance of 1.2 ohms, which provides low conduction loss. It also has a low gate charge of 10nC, allowing for faster switching speeds and improved operation. Furthermore, it has improved thermal performance due to its high maximum power dissipation of 2.7W. Its low gate-source threshold voltage of 1.2V ensures reliable operation at low voltage power supplies.
The MGSF1N02LT1G is suitable for a wide range of applications, including switching power supplies, DC-DC converters, battery chargers, and more. It is designed to withstand high energy pulse in the avalanche and commutation mode, making it suitable for high power applications. The device is also RoHS compliant, ensuring that it is safe to use in a variety of applications.
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MGSF1N02LT1G MOSFET Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor Images
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