Product Listing:
IPW65R080CFD MOSFET
Features:
• Low On-Resistance
• Low Gate Charge
• Low Input and Output Capacitance
• Low Leakage Current
• Low Threshold Voltage
• High Avalanche Energy
• Fast Switching
Parameters:
• Drain-Source Voltage (VDS): 80V
• Gate-Source Voltage (VGS): -20V to 20V
• Drain Current (ID): 65A
• Drain-Source On-Resistance (RDS(ON)): 0.03Ω
• Gate Charge (Qg): 7.8nC
• Input Capacitance (Ciss): 860pF
• Output Capacitance (Coss): 175pF
• Leakage Current (IDSS): 1mA
• Threshold Voltage (VTH): 0.35V
• Avalanche Energy (EAS): 88mJ
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.
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Power MOSFET IPW65R080CFDFKSA1 High-Performance and High-Reliability Images
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