SI1029X-T1-GE3 MOSFET Power Electronics High-Efficiency Low-Voltage Switching for Maximum Performance
Product Description:
The SI1029X-T1-GE3 is a 30 V, 3.2 A N-Channel MOSFET Transistor with a low RDS(on) of 1.2 mΩ. Its low gate charge and fast switching speed make it ideal for high-current and high-frequency applications.
Features:
• Low RDS(on): 1.2 mΩ
• Low gate charge
• High-frequency switching
• Maximum Voltage: 30 V
• Maximum Current: 3.2 A
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