IRFI4019H-117P MOSFET Power Electronics High Performance Low On Resistance
Product Overview:
The IRFI4019H-117P MOSFET is an N-channel enhancement mode silicon gate power field effect transistor developed for use in high-speed switching applications. This device features an enhanced body diode with a low forward voltage drop, fast switching speed, and low on-resistance.
Product Specifications:
• Drain-Source Voltage (Vdss): 100V
• Drain Current (Id): 19A
• Gate-Source Voltage (Vgs): ±20V
• Gate Threshold Voltage (Vgs(th)): 2.8V
• On-Resistance (Rds): 0.0055Ω
• Transistor Polarity: N-Channel
• Maximum Power Dissipation (Pd): 4.5W
• Operating Temperature Range: -55°C to 175°C
• Mounting Type: Through Hole
• Package/Case: TO-220AB
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